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authorKevin Cernekee <cernekee@gmail.com>2010-05-04 20:58:10 -0700
committerDavid Woodhouse <David.Woodhouse@intel.com>2010-05-14 01:56:12 +0100
commitb60b08b02ca8d9575985ae6711bd656dd67e9039 (patch)
tree9178d2431c98688c2d4665b6e79c12fba0bf768b /drivers/mtd/nand
parent426c457a3216fac74e3d44dd39729b0689f4c7ab (diff)
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mtd: nand: support alternate BB marker locations on MLC
This is a slightly modified version of a patch submitted last year by Reuben Dowle <reuben.dowle@navico.com>. His original comments follow: This patch adds support for some MLC NAND flashes that place the BB marker in the LAST page of the bad block rather than the FIRST page used for SLC NAND and other types of MLC nand. Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND): " Identifying Initial Invalid Block(s) All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that the last page of every initial invalid block has non-FFh data at the column address of 2,048. ... " As far as I can tell, this is the same for all Samsung MLC nand, and in fact the samsung bsp for the processor used in our project (s3c6410) actually contained a hack similar to this patch but less portable to enable use of their NAND parts. I discovered this problem when trying to use a Micron NAND which does not used this layout - I wish samsung would put their stuff in main-line to avoid this type of problem. Currently this patch causes all MLC nand with manufacturer codes from Samsung and ST(Numonyx) to use this alternative location, since these are the manufactures that I know of that use this layout. Signed-off-by: Kevin Cernekee <cernekee@gmail.com> Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Diffstat (limited to 'drivers/mtd/nand')
-rw-r--r--drivers/mtd/nand/nand_base.c15
-rw-r--r--drivers/mtd/nand/nand_bbt.c3
2 files changed, 18 insertions, 0 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 85891dc..4a7b864 100644
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -347,6 +347,9 @@ static int nand_block_bad(struct mtd_info *mtd, loff_t ofs, int getchip)
struct nand_chip *chip = mtd->priv;
u16 bad;
+ if (chip->options & NAND_BB_LAST_PAGE)
+ ofs += mtd->erasesize - mtd->writesize;
+
page = (int)(ofs >> chip->page_shift) & chip->pagemask;
if (getchip) {
@@ -396,6 +399,9 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
uint8_t buf[2] = { 0, 0 };
int block, ret;
+ if (chip->options & NAND_BB_LAST_PAGE)
+ ofs += mtd->erasesize - mtd->writesize;
+
/* Get block number */
block = (int)(ofs >> chip->bbt_erase_shift);
if (chip->bbt)
@@ -2933,6 +2939,15 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
if (*maf_id != NAND_MFR_SAMSUNG && !type->pagesize)
chip->options &= ~NAND_SAMSUNG_LP_OPTIONS;
+ /*
+ * Bad block marker is stored in the last page of each block
+ * on Samsung and Hynix MLC devices
+ */
+ if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ (*maf_id == NAND_MFR_SAMSUNG ||
+ *maf_id == NAND_MFR_HYNIX))
+ chip->options |= NAND_BB_LAST_PAGE;
+
/* Check for AND chips with 4 page planes */
if (chip->options & NAND_4PAGE_ARRAY)
chip->erase_cmd = multi_erase_cmd;
diff --git a/drivers/mtd/nand/nand_bbt.c b/drivers/mtd/nand/nand_bbt.c
index 387c45c..ad97c0c 100644
--- a/drivers/mtd/nand/nand_bbt.c
+++ b/drivers/mtd/nand/nand_bbt.c
@@ -432,6 +432,9 @@ static int create_bbt(struct mtd_info *mtd, uint8_t *buf,
from = (loff_t)startblock << (this->bbt_erase_shift - 1);
}
+ if (this->options & NAND_BB_LAST_PAGE)
+ from += mtd->erasesize - (mtd->writesize * len);
+
for (i = startblock; i < numblocks;) {
int ret;